Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs

Structural and electrical properties of HfO2 and HfO2/Gd2O3 gate stacks on p-GaAs substrates have been investigated. It has been demonstrated that the presence of thin layer of Gd2O3 between HfO2 and GaAs improves metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, frequency dispersion, and leakage current. It is also found that HfO2/Gd2O3 stack can reduce the interfacial GaAs-oxide formation, thus reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion significantly improves the electrical properties of the dielectric stacks. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-04
Language
ENG
Keywords

PHYSICAL-PROPERTIES; DEPOSITION; OXIDE; METAL; SUBSTRATE; MOSFET; PASSIVATION; TRANSISTOR; FILMS

Citation

APPLIED PHYSICS LETTERS, v.90, no.18

ISSN
0003-6951
DOI
10.1063/1.2732821
URI
http://hdl.handle.net/10203/1550
Appears in Collection
EE-Journal Papers(저널논문)
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