DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hyung-Cheol Shin | - |
dc.date.accessioned | 2013-03-18T17:07:47Z | - |
dc.date.available | 2013-03-18T17:07:47Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | Silicon Nanoelectronics Workshop 2003, v., no., pp.32 - 33 | - |
dc.identifier.uri | http://hdl.handle.net/10203/150525 | - |
dc.language | ENG | - |
dc.title | A Tri-Gate MOSFET with Gate-to-Source/Drain Non-overlapped Structure for 5 nm Regime | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 32 | - |
dc.citation.endingpage | 33 | - |
dc.citation.publicationname | Silicon Nanoelectronics Workshop 2003 | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Hyung-Cheol Shin | - |
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