A Tri-Gate MOSFET with Gate-to-Source/Drain Non-overlapped Structure for 5 nm Regime
- Issue Date
- 2003
- Language
- ENG
- Citation
Silicon Nanoelectronics Workshop 2003, pp.32 - 33
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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