The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural, modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2003-04
Language
ENG
Keywords

TECHNOLOGY

Citation

IEEE ELECTRON DEVICE LETTERS, v.24, no.4, pp.239 - 241

ISSN
0741-3106
URI
http://hdl.handle.net/10203/1505
Appears in Collection
EE-Journal Papers(저널논문)
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