Defect properties of Si impurities in HfO2: a physical origin of the threshold voltage problem in hafnium-based MOS devices

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Publisher
한국물리학회
Issue Date
2005-10
Language
ENG
Citation

한국물리학회 가을학술논문발표회 , pp.547 - 547

URI
http://hdl.handle.net/10203/150188
Appears in Collection
PH-Conference Papers(학술회의논문)
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