Effect of domain structure on thermal stability of nanoscale ferroelectric domains

We performed piezoelectric force microscopy (PFM) measurements on arrays of poled nanosize domains in 150 nm thick [111] preferentially oriented Pb(Zr0.4Ti0.6)O-3 films grown by chemical solution deposition. Each domain of arrays was characterized by dot, egg, and ring structures depending on the pulse width ranging from 1 to 5 ms. The PFM measurements were followed by heat treatments at successively higher temperatures of 100 degreesC, 130 degreesC, and 160 degreesC for 30 min with rapid cooling down to room temperature before each measurement. The retention loss phenomena of the bits were characterized by measuring the number and dimension change of the remaining data bits. It was concluded that the ring-structured bit arrays, which represent fully penetrating domains through the film thickness, were the most stable form in terms of retention loss characteristics. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-05
Language
English
Keywords

THIN-FILMS; POLARIZATION; SIZE

Citation

APPLIED PHYSICS LETTERS, v.80, no.21, pp.4000 - 4002

ISSN
0003-6951
DOI
10.1063/1.1481537
URI
http://hdl.handle.net/10203/1476
Appears in Collection
MS-Journal Papers(저널논문)
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