Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

A InGaP/GaAs heterojunction bipolar transistor structure is proposed in which the base epi-layer underneath the extended ledge works as a base ballast resistor. The structure eliminates the critical alignment for a passivation ledge formation as well as additional process steps for external base ballast resistor. Both ballasted and unballasted devices were fabricated and compared. Small signal equivalent circuit gives us the magnitude of the effective ballast resistance. The thermal characteristics, including gain-collapsed I-V and Vb, regression curve are shown and modeled. The temperature dependency of base sheet resistance and its influence on the device performance are also discussed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2001-10
Language
ENG
Keywords

HETEROJUNCTION BIPOLAR-TRANSISTORS; CURRENT GAIN; COLLAPSE

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.10, pp.2442 - 2445

ISSN
0018-9383
URI
http://hdl.handle.net/10203/1470
Appears in Collection
EE-Journal Papers(저널논문)
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