A spline large-signal FET model based on bias-dependent pulsed I-V measurement

A spline large-signal FET model is presented. This includes a quiescent bias dependency to predict nonlinear dynamic behavior of FETs in which self-heating and trap effects are present. The intrinsic device of the model represented by a parallel connection of current and charge sources and the model parameters are extracted from bias-dependent pulsed I-Vs and S-parameters, respectively. The validity of the model is demonstrated by comparing the simulated small-signal S-parameters over a wide bias range with measured data. Nonlinear behaviors of FETs such as P-in - P-out, third-order intermodulation distortion, and efficiency are also compared.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2002-11
Language
ENG
Keywords

EQUIVALENT-CIRCUIT

Citation

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.50, no.11, pp.2598 - 2603

ISSN
0018-9480
URI
http://hdl.handle.net/10203/1468
Appears in Collection
EE-Journal Papers(저널논문)
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