Infrared absorption of an In0.2Ga0.8As/GaAs quantum-well infrared photodetector employing a p-n-p camel diode structure

Far-infrared absorption of an In0.2Ga0.8As/GaAs multiple-quantum-well infrared photodetector employing a p-n-p camel diode structure is studied. The detector showed a photocurrent response to normal incident light at approximately 3 mum due to the intersubband hole transition, which is attributed to the strong hole-band mixing of the strained multiple quantum well. Application of the camel diode structure to the photodetector substantially reduced the dark hole current, resulting in an improved detectivity. (C) 2001 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2001-07
Language
ENG
Keywords

STRAIN; PERFORMANCE

Citation

APPLIED PHYSICS LETTERS, v.79, no.4, pp.455 - 457

ISSN
0003-6951
URI
http://hdl.handle.net/10203/1467
Appears in Collection
EE-Journal Papers(저널논문)
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