Properties of RFLDMOS with low resistive substrate for handset power applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, J. | - |
| dc.contributor.author | Lee, S. | - |
| dc.contributor.author | Oh, H.-S. | - |
| dc.contributor.author | Jeong, J.-H. | - |
| dc.contributor.author | Baek, D. | - |
| dc.contributor.author | Koh, K. | - |
| dc.contributor.author | Han, J. | - |
| dc.contributor.author | Park, C. | - |
| dc.contributor.author | Hong, Songcheol | - |
| dc.contributor.author | Shon, I. | - |
| dc.date.accessioned | 2007-09-18T06:36:12Z | - |
| dc.date.available | 2007-09-18T06:36:12Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-06-12 | - |
| dc.identifier.citation | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers, v., no., pp.61 - 64 | - |
| dc.identifier.issn | 1529-2517 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1466 | - |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Properties of RFLDMOS with low resistive substrate for handset power applications | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-27644556936 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 61 | - |
| dc.citation.endingpage | 64 | - |
| dc.citation.publicationname | 2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Ko, J. | - |
| dc.contributor.nonIdAuthor | Lee, S. | - |
| dc.contributor.nonIdAuthor | Oh, H.-S. | - |
| dc.contributor.nonIdAuthor | Jeong, J.-H. | - |
| dc.contributor.nonIdAuthor | Baek, D. | - |
| dc.contributor.nonIdAuthor | Koh, K. | - |
| dc.contributor.nonIdAuthor | Han, J. | - |
| dc.contributor.nonIdAuthor | Park, C. | - |
| dc.contributor.nonIdAuthor | Shon, I. | - |
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