Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity

A room temperature operation of far-infrared detectors made of self-assembled quantum dots embedded in the channel region of modulation-doped heterostructures is demonstrated. At room temperature, the detector shows a low dark current ranging in the nano-amperes at a bias voltage of 10 V. After the optimization of the separation between the quantum dot region and the 2DEG, a peak responsivity of 5.3 A/W is obtained at 9.0 mu m. The high detectivities of 6 x 10(8) and 5 x 10(10) cmHz(1/2)/W are obtained at room temperature and 80 K, respectively.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2000-07
Language
ENG
Citation

IEEE ELECTRON DEVICE LETTERS, v.21, no.7, pp.329 - 331

ISSN
0741-3106
URI
http://hdl.handle.net/10203/1461
Appears in Collection
EE-Journal Papers(저널논문)
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