RPCVD silicon nitride passivation of InGaAsP with temperature ramping during deposition

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Issue Date
2005-05-15
Language
ENG
Citation

207th Meeting of the Electrochemical Society, pp.596 -

ISSN
1091-8213
URI
http://hdl.handle.net/10203/144413
Appears in Collection
EE-Conference Papers(학술회의논문)
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