Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application

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Vertically standing single-walled carbon nanotube (SSWCNT)-embedded transistors have been demonstrated for a flash memory application. The performance of the SSWCNT device was compared with a lying SWCNT (LSWCNT) device to verify the directional effect of immobilized SWCNTs. The SSWCNT device shows a better program/erase transient and a threefold enhanced retention characteristics over the LSWCNT device due to the high coupling ratio and the defect immunity based on the isolated distribution and vertical directionality nature of the SSWCNT. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-08
Language
English
Article Type
Article
Keywords

METAL NANOCRYSTAL MEMORY; FIELD-EFFECT TRANSISTORS; PART I; FABRICATION; DESIGN

Citation

APPLIED PHYSICS LETTERS, v.91, no.6, pp.851 - 858

ISSN
0003-6951
DOI
10.1063/1.2767211
URI
http://hdl.handle.net/10203/14441
Appears in Collection
EE-Journal Papers(저널논문)
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