Effects of S/D non-overlap and high-κ dielectrics on nano CMOS design
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | ko |
| dc.date.accessioned | 2013-03-16T21:55:57Z | - |
| dc.date.available | 2013-03-16T21:55:57Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2001-12 | - |
| dc.identifier.citation | ISDRS, pp.661 - 664 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/136304 | - |
| dc.language | English | - |
| dc.publisher | ISDRS | - |
| dc.title | Effects of S/D non-overlap and high-κ dielectrics on nano CMOS design | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000175261300177 | - |
| dc.identifier.scopusid | 2-s2.0-84961836774 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 661 | - |
| dc.citation.endingpage | 664 | - |
| dc.citation.publicationname | ISDRS | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Washington DC | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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