A new quantum dot formation process using wet etching of poly-Si along grain boundaries
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | ko |
| dc.date.accessioned | 2013-03-16T20:53:29Z | - |
| dc.date.available | 2013-03-16T20:53:29Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000-07 | - |
| dc.identifier.citation | MNC2000, pp.248 - 249 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/135747 | - |
| dc.language | English | - |
| dc.publisher | MNC | - |
| dc.title | A new quantum dot formation process using wet etching of poly-Si along grain boundaries | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000166793600121 | - |
| dc.identifier.scopusid | 2-s2.0-33745629662 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 248 | - |
| dc.citation.endingpage | 249 | - |
| dc.citation.publicationname | MNC2000 | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | Tokyo | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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