Device Characteristics of 25 nm MOSFET with Floating Side Gates
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-16T20:48:52Z | - |
| dc.date.available | 2013-03-16T20:48:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | ICSMM 2000, v., no., pp.118 - 119 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/135694 | - |
| dc.language | ENG | - |
| dc.title | Device Characteristics of 25 nm MOSFET with Floating Side Gates | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 118 | - |
| dc.citation.endingpage | 119 | - |
| dc.citation.publicationname | ICSMM 2000 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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