Two Band Tunneling Currents in Dual-Gate CMOSFET with Ultrathin Gate Oxide
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-16T20:28:11Z | - |
| dc.date.available | 2013-03-16T20:28:11Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | ICSMM 2000, v., no., pp.108 - 109 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/135489 | - |
| dc.language | ENG | - |
| dc.title | Two Band Tunneling Currents in Dual-Gate CMOSFET with Ultrathin Gate Oxide | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 108 | - |
| dc.citation.endingpage | 109 | - |
| dc.citation.publicationname | ICSMM 2000 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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