MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries

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dc.contributor.authorHyung-Cheol Shin-
dc.date.accessioned2013-03-16T17:28:11Z-
dc.date.available2013-03-16T17:28:11Z-
dc.date.created2012-02-06-
dc.date.issued2000-
dc.identifier.citation2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, v., no., pp.221 - 224-
dc.identifier.urihttp://hdl.handle.net/10203/133751-
dc.languageENG-
dc.titleMOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage221-
dc.citation.endingpage224-
dc.citation.publicationname2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorHyung-Cheol Shin-
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