MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-16T17:28:11Z | - |
| dc.date.available | 2013-03-16T17:28:11Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2000 | - |
| dc.identifier.citation | 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, v., no., pp.221 - 224 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/133751 | - |
| dc.language | ENG | - |
| dc.title | MOS Memory Using Si Nanocrystals Formed by Wet Etching of Poly-Silicon Along Grain Boundaries | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 221 | - |
| dc.citation.endingpage | 224 | - |
| dc.citation.publicationname | 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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