Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications

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Tip traveling and grain boundary effects have been investigated by varying the voltage pulse width on Pb(Zr0.25Ti0.75)O3 films using piezoelectric force microscopy. Depending on pulse width, the authors distinguish three regions of domain formation. It was found that grain boundaries act as electric shield, which prevents domain growth across grains. Domain growth across grains was mainly due to the tip traveling effect. Calculations based on the authors’ model matched well with experimental data.
Description
신소재공학과
Publisher
AMER INST PHYSICS
Issue Date
2006-10
Language
ENG
Article Type
Article
Keywords

piezoelectric force microscopy; spm

Citation

APPLIED PHYSICS LETTERS, v.89, pp.477-494

ISSN
0003-6951
DOI
10.1063/1.2370502
URI
http://hdl.handle.net/10203/1310
Link
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000241585800090&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=395d0a69a77a4892902e43d8987013d5
Appears in Collection
MS-Journal Papers(저널논문)
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