Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxidesBipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

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Issue Date
2001-07-09
Language
ENG
Citation

8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp.59 - 59

URI
http://hdl.handle.net/10203/130395
Appears in Collection
EE-Conference Papers(학술회의논문)
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