DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, Jae-Sik | - |
dc.contributor.author | Park, Hyung-Sang | - |
dc.contributor.author | Kang, Sang-Won | - |
dc.date.accessioned | 2007-09-04T08:58:01Z | - |
dc.date.available | 2007-09-04T08:58:01Z | - |
dc.date.issued | 1999-07-19 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS 99 75(11) 1521-1523 | en |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1295 | - |
dc.description.abstract | Titanium–silicon–nitride films were grown by metal–organic atomic-layer deposition at 180 °C. When silane was supplied separately in the sequence of a tetrakis(dimethylamido) titanium pulse, silane pulse, and ammonia pulse, the Si content in the deposited films and the deposition thickness per cycle remained almost constant at 18 at.% and 0.22 nm/cycle, even though the silane partial pressure varied from 0.27 to 13.3 Pa. Especially, the Si content dependence is strikingly different from the conventional chemical-vapor deposition. The capacitance–voltage measurement revealed that the Ti–Si–N film prevents the diffusion of Cu up to 800 °C for 60 min. Step coverage was approximately 100% even on the 0.3 mm diam hole with slightly negative slope and 10:1 aspect ratio. | en |
dc.language.iso | en_US | en |
dc.publisher | American Institute of Physics | en |
dc.subject | ALD | en |
dc.title | Metal–organic atomic-layer deposition of titanium–silicon–nitride films | en |
dc.type | Article | en |
dc.identifier.doi | 10.1063/1.124742 | - |
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