Metal–organic atomic-layer deposition of titanium–silicon–nitride films

Titanium–silicon–nitride films were grown by metal–organic atomic-layer deposition at 180 °C. When silane was supplied separately in the sequence of a tetrakis(dimethylamido) titanium pulse, silane pulse, and ammonia pulse, the Si content in the deposited films and the deposition thickness per cycle remained almost constant at 18 at.% and 0.22 nm/cycle, even though the silane partial pressure varied from 0.27 to 13.3 Pa. Especially, the Si content dependence is strikingly different from the conventional chemical-vapor deposition. The capacitance–voltage measurement revealed that the Ti–Si–N film prevents the diffusion of Cu up to 800 °C for 60 min. Step coverage was approximately 100% even on the 0.3 mm diam hole with slightly negative slope and 10:1 aspect ratio.
Publisher
American Institute of Physics
Issue Date
1999-07-19
Keywords

ALD

Citation

APPLIED PHYSICS LETTERS 99 75(11) 1521-1523

ISSN
0003-6951
DOI
10.1063/1.124742
URI
http://hdl.handle.net/10203/1295
Appears in Collection
MS-Journal Papers(저널논문)
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