A kinetic model has been studied for exploring the prospects of atomic layer deposition (ALD) of TiN thin films. In the present article, assuming the existence for readsorption of each reactant, we can explain and model the film growth of 0-2 at. ML in one deposition cycle in TiN-ALD. Applying the proposed model to TiN films grown by ALD using tetrakis(dimethylamido)titanium and ammonia, the parameters related to both the adsorption rate and the adsorption order of each reactant were extracted. With the extracted parameters, TiN film thickness in one deposition cycle depending on the pulse time of each reactant could be predicted in a reasonable range of accuracy. (C) 2000 American Institute of Physics. [S0021-8979(00)07609-X].