DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Pan Kwi | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2007-09-04T05:31:24Z | - |
dc.date.available | 2007-09-04T05:31:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.89, no.19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1279 | - |
dc.description.abstract | HfO2 films with an enhanced dielectric constant, prepared through phase transition engineering by the addition of Al2O3, were deposited by plasma-enhanced atomic layer deposition adopting a supercycle concept. After an annealing step at 700 degrees C, the tetragonal phase, which is a high-temperature phase of HfO2, was stabilized completely at room temperature and the crystallographic direction was changed to the preferred (002) orientation. As a result, Hf aluminate film with a (002)-oriented tetragonal phase had a dielectric constant of 47, approximately twice as large as the reported value of HfO2 film with a monoclinic phase. | - |
dc.description.sponsorship | This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)(KRF-2005-005-J09702). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Amer Inst Physics | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | ELECTRICAL-PROPERTIES | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | HAFNIUM | - |
dc.subject | SILICON | - |
dc.subject | GROWTH | - |
dc.subject | OXIDE | - |
dc.title | Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3 | - |
dc.type | Article | - |
dc.identifier.wosid | 000241960400070 | - |
dc.identifier.scopusid | 2-s2.0-33750906812 | - |
dc.type.rims | ART | - |
dc.citation.volume | 89 | - |
dc.citation.issue | 19 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2387126 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Park, Pan Kwi | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | HAFNIUM | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | OXIDE | - |
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