Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3

HfO2 films with an enhanced dielectric constant, prepared through phase transition engineering by the addition of Al2O3, were deposited by plasma-enhanced atomic layer deposition adopting a supercycle concept. After an annealing step at 700 degrees C, the tetragonal phase, which is a high-temperature phase of HfO2, was stabilized completely at room temperature and the crystallographic direction was changed to the preferred (002) orientation. As a result, Hf aluminate film with a (002)-oriented tetragonal phase had a dielectric constant of 47, approximately twice as large as the reported value of HfO2 film with a monoclinic phase.
Publisher
Amer Inst Physics
Issue Date
2006-11
Language
ENG
Keywords

ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; GATE DIELECTRICS; HAFNIUM; SILICON; GROWTH; OXIDE

Citation

APPLIED PHYSICS LETTERS, v.89, no.19

ISSN
0003-6951
DOI
10.1063/1.2387126
URI
http://hdl.handle.net/10203/1279
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
000241960400070.pdf(274.02 kB)Download
  • Hit : 526
  • Download : 1008
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 66 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0