Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3

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HfO2 films with an enhanced dielectric constant, prepared through phase transition engineering by the addition of Al2O3, were deposited by plasma-enhanced atomic layer deposition adopting a supercycle concept. After an annealing step at 700 degrees C, the tetragonal phase, which is a high-temperature phase of HfO2, was stabilized completely at room temperature and the crystallographic direction was changed to the preferred (002) orientation. As a result, Hf aluminate film with a (002)-oriented tetragonal phase had a dielectric constant of 47, approximately twice as large as the reported value of HfO2 film with a monoclinic phase.
Publisher
Amer Inst Physics
Issue Date
2006-11
Language
ENG
Article Type
Article
Keywords

ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; GATE DIELECTRICS; HAFNIUM; SILICON; GROWTH; OXIDE

Citation

APPLIED PHYSICS LETTERS, v.89, no.19

ISSN
0003-6951
DOI
10.1063/1.2387126
URI
http://hdl.handle.net/10203/1279
Appears in Collection
MS-Journal Papers(저널논문)
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