DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Pan Kwi | ko |
dc.contributor.author | Cha, Eun-Soo | ko |
dc.contributor.author | Kang, Sang-Won | ko |
dc.date.accessioned | 2007-09-04T03:17:06Z | - |
dc.date.available | 2007-09-04T03:17:06Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-06 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.90, no.23, pp.232906 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/1278 | - |
dc.description.abstract | The effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2/Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 degrees C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface. (c) 2007 American Institute of Physics. | - |
dc.description.sponsorship | This work was supported by the Korea Research Foundation grant funded by the Korean Government (MOEHRD)(KRF-2005-005-J09702). | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Amer Inst Physics | - |
dc.subject | HFO2 FILMS | - |
dc.subject | THIN-FILMS | - |
dc.subject | SILICON | - |
dc.subject | SUPERLATTICES | - |
dc.subject | GROWTH | - |
dc.title | Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition | - |
dc.type | Article | - |
dc.identifier.wosid | 000247145500053 | - |
dc.identifier.scopusid | 2-s2.0-34250786697 | - |
dc.type.rims | ART | - |
dc.citation.volume | 90 | - |
dc.citation.issue | 23 | - |
dc.citation.beginningpage | 232906 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.2746416 | - |
dc.contributor.localauthor | Kang, Sang-Won | - |
dc.contributor.nonIdAuthor | Park, Pan Kwi | - |
dc.contributor.nonIdAuthor | Cha, Eun-Soo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | HFO2 FILMS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SUPERLATTICES | - |
dc.subject.keywordPlus | GROWTH | - |
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