Interface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition

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dc.contributor.authorPark, Pan Kwiko
dc.contributor.authorCha, Eun-Sooko
dc.contributor.authorKang, Sang-Wonko
dc.date.accessioned2007-09-04T03:17:06Z-
dc.date.available2007-09-04T03:17:06Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-06-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.90, no.23, pp.232906-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/1278-
dc.description.abstractThe effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2/Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition. After annealing at 700 degrees C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40 A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2. As the sublayer thickness was reduced to 10 A, the dielectric constant increased up to 17.7 because a thin Hf-O-Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface. (c) 2007 American Institute of Physics.-
dc.description.sponsorshipThis work was supported by the Korea Research Foundation grant funded by the Korean Government (MOEHRD)(KRF-2005-005-J09702).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAmer Inst Physics-
dc.subjectHFO2 FILMS-
dc.subjectTHIN-FILMS-
dc.subjectSILICON-
dc.subjectSUPERLATTICES-
dc.subjectGROWTH-
dc.titleInterface effect on dielectric constant of HfO2/Al 2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition-
dc.typeArticle-
dc.identifier.wosid000247145500053-
dc.identifier.scopusid2-s2.0-34250786697-
dc.type.rimsART-
dc.citation.volume90-
dc.citation.issue23-
dc.citation.beginningpage232906-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.2746416-
dc.contributor.localauthorKang, Sang-Won-
dc.contributor.nonIdAuthorPark, Pan Kwi-
dc.contributor.nonIdAuthorCha, Eun-Soo-
dc.type.journalArticleArticle-
dc.subject.keywordPlusHFO2 FILMS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusSUPERLATTICES-
dc.subject.keywordPlusGROWTH-
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