Measurement of thermal expansion coefficient of poly-Si using microgauge sensors

Thermal expansion coefficient of heavily doped LPCVD polycrystalline (poly-Si) thin film was extracted by microgauge sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film was extracted. The results revealed a value of 2.9x106 /K of thermal expansion coefficient of highly doped poly-Si thin films with standard deviation ofO.24x106 /K.
Publisher
International Society for Optical Engineering (SPIE)
Issue Date
1997
Keywords

thermal expansion coefficient; microgauge; MEMS; thin film

Citation

SPIE Vol. 3242, pp.202-211

ISSN
0277-786X
URI
http://hdl.handle.net/10203/1270
Appears in Collection
MS-Journal Papers(저널논문)
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