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Ultrathin silicon dioxide formation by ozone on ultraflat SI surface

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Kurokawa A. / Maeda T. / Sakamoto K. / Itoh H. / Nakamura K. / Koike K. / Moon D.W. / Ha Y.H.researcher / Ichimura S. / Ando A.

Issue Date: 1999-04-05

Language: ENG

Citation: Proceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics, v.567, pp.21 - 26

ISSN: 0272-9172

URI: http://hdl.handle.net/10203/126754

Appears in Collection: RIMS Conference Papers

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