DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Jin-Woo | ko |
dc.contributor.author | Lee, Jiye | ko |
dc.contributor.author | Park, Donggun | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2009-11-11T04:52:03Z | - |
dc.date.available | 2009-11-11T04:52:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-07 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.28, no.7, pp.625 - 627 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/12407 | - |
dc.description.abstract | The body thickness dependence of impact ionization for a multiple-gate fin field-effect transistor (FinFET) is presented. It is found that the nonlocal effect and series resistance are distinct features of reduced impact ionization in the multiple-gate FinFET, and these effects become more pronounced as the body thickness decreases. The impact ionization constant B-i is newly extracted by considering the series resistance and nonlocal carrier heating effect. A refined analytical substrate current model is developed from the previous model and revamped for multiple-gate devices. The new substrate current model is then compared with measurement data, and good agreement is observed. | - |
dc.description.sponsorship | This work was supported in part by Samsung Electronics Co., Ltd., and in part by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development sponsored by the Ministry of Commerce, Industry and Energy of the Korean Government. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DEVICES | - |
dc.title | Body thickness dependence of impact ionization in a multiple-gate FinFET | - |
dc.type | Article | - |
dc.identifier.wosid | 000247643900028 | - |
dc.identifier.scopusid | 2-s2.0-34447269711 | - |
dc.type.rims | ART | - |
dc.citation.volume | 28 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 625 | - |
dc.citation.endingpage | 627 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2007.898284 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Han, Jin-Woo | - |
dc.contributor.nonIdAuthor | Lee, Jiye | - |
dc.contributor.nonIdAuthor | Park, Donggun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | characteristic length | - |
dc.subject.keywordAuthor | fin field-effect transistor (FinFET) | - |
dc.subject.keywordAuthor | impact ionization | - |
dc.subject.keywordAuthor | multiple-gate MOSFET | - |
dc.subject.keywordAuthor | nonlocal effect | - |
dc.subject.keywordAuthor | substrate current | - |
dc.subject.keywordAuthor | trigate | - |
dc.subject.keywordPlus | DEVICES | - |
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