Body thickness dependence of impact ionization in a multiple-gate FinFET

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The body thickness dependence of impact ionization for a multiple-gate fin field-effect transistor (FinFET) is presented. It is found that the nonlocal effect and series resistance are distinct features of reduced impact ionization in the multiple-gate FinFET, and these effects become more pronounced as the body thickness decreases. The impact ionization constant B-i is newly extracted by considering the series resistance and nonlocal carrier heating effect. A refined analytical substrate current model is developed from the previous model and revamped for multiple-gate devices. The new substrate current model is then compared with measurement data, and good agreement is observed.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2007-07
Language
English
Article Type
Article
Keywords

DEVICES

Citation

IEEE ELECTRON DEVICE LETTERS, v.28, no.7, pp.625 - 627

ISSN
0741-3106
DOI
10.1109/LED.2007.898284
URI
http://hdl.handle.net/10203/12407
Appears in Collection
EE-Journal Papers(저널논문)
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