Silicon nano-crystal memory with tunneling nitride
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hyung-Cheol Shin | - |
| dc.date.accessioned | 2013-03-15T14:09:34Z | - |
| dc.date.available | 2013-03-15T14:09:34Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1998 | - |
| dc.identifier.citation | International Conference on Solid State Devices and Materials, v., no., pp.170 - 171 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/120109 | - |
| dc.language | ENG | - |
| dc.title | Silicon nano-crystal memory with tunneling nitride | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 170 | - |
| dc.citation.endingpage | 171 | - |
| dc.citation.publicationname | International Conference on Solid State Devices and Materials | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Hyung-Cheol Shin | - |
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