Improvement in HgCdTe diode characteristics by flip-chip bonded annealing

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Issue Date
1997-04-20
Language
ENG
Citation

Infrared Technology and Applications XXIII, v.3061, pp.104 - 110

URI
http://hdl.handle.net/10203/118529
Appears in Collection
EE-Conference Papers(학술회의논문)RIMS Conference Papers
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