Partially depleted SONOs FinFET for unified RAM (URAM) - Unified function for high-speed 1T DRAM and nonvolatile memory

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Unified random access memory, (URAM) is demonstrated for the first time. The novel partially depleted (PD) SONOS FinFET provides unified function of a high-speed capacitorless IT DRAM and a nonvolatile memory (NVM). The combination of an oxide/nitride/oxide (O/N/O) layer and a floating-body facilitates URAM operation in PD SONOS FinFETs. An NVM function is achieved by FN tunneling into the O/N/O stack and, a 1T-DRAM function is achieved by excessive-hole accumulation in the ID body. The fabricated PD SONOS FinFET shows retention time exceeding 10 years for NVM operation and program/erase time below 6 ns for 1T-DRAM in a single-cell transistor. These two memory functions are guaranteed without disturbance between them.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2008-07
Language
English
Article Type
Article
Keywords

CELL

Citation

IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.781 - 783

ISSN
0741-3106
DOI
10.1109/LED.2008.2000616
URI
http://hdl.handle.net/10203/11790
Appears in Collection
EE-Journal Papers(저널논문)
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