A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, T. | ko |
| dc.contributor.author | Yang, Kyounghoon | ko |
| dc.date.accessioned | 2007-08-30T07:01:30Z | - |
| dc.date.available | 2007-08-30T07:01:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2002-06-02 | - |
| dc.identifier.citation | IEEE MTT-S International Microwave Symposium Digest, pp.2141 - 2144 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1176 | - |
| dc.description.sponsorship | the National Program for Tera-level Nanodevices | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000178310900502 | - |
| dc.identifier.scopusid | 2-s2.0-0036067844 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 2141 | - |
| dc.citation.endingpage | 2144 | - |
| dc.citation.publicationname | IEEE MTT-S International Microwave Symposium Digest | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Seattle, WA | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Kim, T. | - |
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