A new large-signal InP/InGaAs single HBT model including self-heating and impact ionization effects

Publisher
IEEE
Issue Date
2002-06-02
Language
ENG
Citation

IEEE MTT-S International Microwave Symposium Digest, v.3, pp.2141 - 2144

URI
http://hdl.handle.net/10203/1176
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
(2002 MTT-S)A New Large-Signal InP-InGaAs Single HBT Model Including Self-Heating and Impact Ionization Effects.pdf(359.9 kB)Download
  • Hit : 464
  • Download : 261
  • Cited 0 times in thomson ci

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0