Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Kyounghoon | - |
| dc.contributor.author | Muuns, G. O. | - |
| dc.contributor.author | Wang, X. | - |
| dc.contributor.author | Haddad, G. I. | - |
| dc.date.accessioned | 2007-08-30T06:37:52Z | - |
| dc.date.available | 2007-08-30T06:37:52Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1997-05-11 | - |
| dc.identifier.citation | IEEE Int. Conf. on InP and Related Materials, v., no., pp.645 - 648 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1171 | - |
| dc.description.sponsorship | the U. S. Army Research Office under the URI program | en |
| dc.language | ENG | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Double Heterojunction Bipolar Transistors with Chirped InGaAs/InP Superlattice Base-Collector Junction Grown by CBE | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 645 | - |
| dc.citation.endingpage | 648 | - |
| dc.citation.publicationname | IEEE Int. Conf. on InP and Related Materials | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Muuns, G. O. | - |
| dc.contributor.nonIdAuthor | Wang, X. | - |
| dc.contributor.nonIdAuthor | Haddad, G. I. | - |
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- EE-Conference Papers(학술회의논문)
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