Gate-to-Source/Drain Nonoverlap Device for Soft-Program Immune Unified RAM (URAM)

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A soft-program immune structure for a unified RAM (URAM) is presented. A unique feature of URAM is the multi-functionality of a Hash and capacitorless 1T-DRAM in a single transistor. However, charge trapping into O/N/O during a cyclic IT-DRAM operation can cause an undesirable threshold voltage shift, resulting in an unstable URAM operation called a soft program. In a gate-to-source/drain nonoverlap structure with a nonextended O/N/O layer under the gate spacer, the impact ionization region is steered out from the gate, which is located under the spacer. In the IT-DRAM mode of URAM, the programming biases are selected so that impact ionization can occur under the gate spacer, thereby alleviating the soft program. The nonoverlap device relieves the operational voltage constraint imposed by the soft program. In addition, nonvolatile flash memory and capacitorless IT-DRAM perform an acceptable performance without interference.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-05
Language
English
Article Type
Article
Keywords

1T-DRAM; CELL

Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp.544 - 546

ISSN
0741-3106
DOI
10.1109/LED.2009.2016441
URI
http://hdl.handle.net/10203/11715
Appears in Collection
EE-Journal Papers(저널논문)
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