Transparent Zinc Oxide Gate Metal-Oxide-Semiconductor Field-Effect Transistor for High-Responsivity Photodetector

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We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal-oxide-semiconductor field-effect-transistor photodetectors. The device has a small optical window only in the channel region, and all other regions (depletion) are protected from external light. Whereas the amplification of photocurrent by external light was not significant at the floated or positively biased substrate, the photocurrent was enhanced at the grounded or negatively biased substrate due to the decrement of the recombination rate in the n-channel MOSFET. Responsivity was in excess of 1500 A/W under white-light illumination, which is higher than that of conventional photodetectors with the semi-transparent polycrystalline-silicon gate.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2009-05
Language
English
Article Type
Article
Keywords

PHOTOTRANSISTORS; PHOTODIODE; DEVICE

Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.5, pp.493 - 495

ISSN
0741-3106
URI
http://hdl.handle.net/10203/11714
Appears in Collection
EE-Journal Papers(저널논문)
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