A bulk FinFET unified-RAM (URAM) cell for multifunctioning NVM and capacitorless 1T-DRAM

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A bulk FinFET-based unified-RAM (URAM) cell technology is demonstrated for the fusion of a nonvolatile-memory (NVM) and capacitorless 1T-DRAM. An oxide/nitride/oxide layer and a floating-body are combined to perform a URAM operation in a single transistor. A buried n-well technology for NMOS allows hole accumulation for the IT-DRAM operation in a p-type bulk substrate. The bulk FinFET URAM offers a cost-effective and fully compatible process with a conventional FinFET SONOS, and it also expedites heat dissipation. Highly reliable NVM and high-speed 1T-DRAM operation are confirmed, and it was also verified that there is no disturbance between the two memory functions.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2008-06
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.29, no.6, pp.632 - 634

ISSN
0741-3106
DOI
10.1109/LED.2008.922142
URI
http://hdl.handle.net/10203/11713
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
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