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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Monolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure

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dc.contributor.authorLin, C. H.-
dc.contributor.authorYang, Kyounghoon-
dc.contributor.authorBhattachrya, M.-
dc.contributor.authorWang, X.-
dc.contributor.authorZhang, X.-
dc.contributor.authorEast, J. R.-
dc.contributor.authorMazumder, P.-
dc.contributor.authorHaddad, G. I.-
dc.date.accessioned2007-08-30T06:36:28Z-
dc.date.available2007-08-30T06:36:28Z-
dc.date.created2012-02-06-
dc.date.issued1998-05-11-
dc.identifier.citationIEEE Int. Conf. on InP and Related Materials, v., no., pp.419 - 422-
dc.identifier.urihttp://hdl.handle.net/10203/1170-
dc.description.sponsorshipthe U.S. Army Research Office under the URI programen
dc.languageENG-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titleMonolithically Integrated InP-Based Minority Logic Gate Using an RTD/HBT Heterostructure-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage419-
dc.citation.endingpage422-
dc.citation.publicationnameIEEE Int. Conf. on InP and Related Materials-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorLin, C. H.-
dc.contributor.nonIdAuthorBhattachrya, M.-
dc.contributor.nonIdAuthorWang, X.-
dc.contributor.nonIdAuthorZhang, X.-
dc.contributor.nonIdAuthorEast, J. R.-
dc.contributor.nonIdAuthorMazumder, P.-
dc.contributor.nonIdAuthorHaddad, G. I.-
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