Transparent Zinc Oxide Gate Metal?Oxide?Semiconductor Field-Effect Transistor for High-Responsivity Photodetector

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We report a new structure of high-responsivity photodetectors that utilizes the transparent and metallic zinc oxide (ZnO) gate in bulk silicon metal–oxide–semiconductor field-effecttransistor photodetectors. The device has a small optical window only in the channel region, and all other regions (depletion) are protected from external light. Whereas the amplification of photocurrent by external light was not significant at the floated or positively biased substrate, the photocurrent was enhanced at the grounded or negatively biased substrate due to the decrement of the recombination rate in the n-channel MOSFET. Responsivity was in excess of 1500 A/W under white-light illumination, which is higher than that of conventional photodetectors with the semitransparent polycrystalline-silicon gate.
Publisher
IEEE
Issue Date
2009-05
Keywords

Field-effect phototransistor,; photodetector; transparent gate

Citation

IEEE ELECTRON DEVICE LETTERS, Vol. 30, No. 5, pp.493-495

ISSN
0741-3106
DOI
10.1109/LED.2009.2016765
URI
http://hdl.handle.net/10203/11699
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
FJ_Eujune%20Lee_Transparent%20Photodetector[1].pdf(395.27 kB)Download

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