Performance of new self-aligned InP/InGaAs HBT's using crystallographically defined emitter contact technology

Publisher
IEEE
Issue Date
2001-05-14
Language
ENG
Citation

2001 International Conference on Indium Phosphide and Related Materials, pp.220 - 223

URI
http://hdl.handle.net/10203/1168
Appears in Collection
EE-Conference Papers(학술회의논문)
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