InP/InGaAs HBTs using crystallographically defined emitter contact technology

Publisher
IEEE
Issue Date
2003-06-08
Language
ENG
Citation

2003 IEEE MTT-S International Microwave Symposium Digest, v.2, pp.1279 - 1282

URI
http://hdl.handle.net/10203/1165
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
(2003 MTT-S)InP-InGaAs HBTs Using Crystallographically Defined Emitter Contact Technology.pdf(311.77 kB)Download
  • Hit : 607
  • Download : 312
  • Cited 0 times in thomson ci

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0