인듐 확산에 의해 제작된 HgCdTe 다이오드의 전기적 특성

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Issue Date
1995
Language
KOR
Citation

제 6회 HgCdTe 반도체 Conference, pp.49 - 56

URI
http://hdl.handle.net/10203/115777
Appears in Collection
EE-Conference Papers(학술회의논문)
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