120-G Hz-Bandwidth Characterization of Microwave Passive Devices Using External Silicon-On-Sapphire Photoconductive Sampling Probe

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Issue Date
1993
Language
ENG
Citation

Ultrafast Electronics and Optoelectronics, pp.224 - 227

URI
http://hdl.handle.net/10203/115276
Appears in Collection
EE-Conference Papers(학술회의논문)
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