Fmax enhancement in InP-based DHBTs using a new lateral reverse-etching technique
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeong, Y. | ko |
| dc.contributor.author | Song, Y. | ko |
| dc.contributor.author | Choi, S. | ko |
| dc.contributor.author | Yoon, M. | ko |
| dc.contributor.author | Yang, Kyounghoon | ko |
| dc.date.accessioned | 2007-08-28T08:30:33Z | - |
| dc.date.available | 2007-08-28T08:30:33Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-05-12 | - |
| dc.identifier.citation | 2003 International Conference Indium Phosphide and Related Materials, pp.22 - 25 | - |
| dc.identifier.issn | 1092-8669 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1147 | - |
| dc.description.sponsorship | a National Program for Tera-Level Nanodevice of the Ministry of Science and Technology | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | Fmax enhancement in InP-based DHBTs using a new lateral reverse-etching technique | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000183253000005 | - |
| dc.identifier.scopusid | 2-s2.0-0038825261 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 22 | - |
| dc.citation.endingpage | 25 | - |
| dc.citation.publicationname | 2003 International Conference Indium Phosphide and Related Materials | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Santa Barbara, CA | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Jeong, Y. | - |
| dc.contributor.nonIdAuthor | Song, Y. | - |
| dc.contributor.nonIdAuthor | Choi, S. | - |
| dc.contributor.nonIdAuthor | Yoon, M. | - |
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