Performance comparison of InP-based PIN diodes for microwave switch applications

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dc.contributor.authorLee, B.ko
dc.contributor.authorKim, T.ko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2007-08-28T08:14:10Z-
dc.date.available2007-08-28T08:14:10Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2005-05-08-
dc.identifier.citation2005 International Conference on Indium Phosphide and Related Materials, pp.456 - 459-
dc.identifier.issn1092-8669-
dc.identifier.urihttp://hdl.handle.net/10203/1144-
dc.description.sponsorshipthe Agency for Defense Development in the Republic of Korea through the Radiowave Detection Research Center at Korea Advanced Institute of Science & Technology(KAIST).en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEEE-
dc.titlePerformance comparison of InP-based PIN diodes for microwave switch applications-
dc.typeConference-
dc.identifier.wosid000232220700122-
dc.identifier.scopusid2-s2.0-33747409025-
dc.type.rimsCONF-
dc.citation.beginningpage456-
dc.citation.endingpage459-
dc.citation.publicationname2005 International Conference on Indium Phosphide and Related Materials-
dc.identifier.conferencecountrySC-
dc.identifier.conferencelocationGlasgow, Scotland-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorLee, B.-
dc.contributor.nonIdAuthorKim, T.-
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