Ion irradiated amorphous silicon: a model approach to dynamics of defect creation and annihilation

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dc.contributor.authorAtwater, Harry A.-
dc.contributor.authorShin, JungHoon-
dc.date.accessioned2013-03-14T23:08:53Z-
dc.date.available2013-03-14T23:08:53Z-
dc.date.created2012-02-06-
dc.date.issued1993-
dc.identifier.citationMaterials Research Society, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/114375-
dc.languageENG-
dc.titleIon irradiated amorphous silicon: a model approach to dynamics of defect creation and annihilation-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameMaterials Research Society-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorShin, JungHoon-
dc.contributor.nonIdAuthorAtwater, Harry A.-
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NT-Conference Papers(학술회의논문)
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