Intrarow Adsorption Structure of Glycine on Ge(100)

The adsorption structure of glycine on Ge(100) was investigated using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We found a major adsorption feature of glycine on Ge(100) in the STM images. This feature appeared as a bright protrusion between two dimer rows with a dark adjacent dimer. The position of the bright protrusion located in the middle of the two dimer rows indicates a multibonding adsorption structure. The results of the theoretical calculations confirm that the adsorption structure of glycine on Ge(100) (between two possible multibonding adsorption structures) is an "intrarow O-H dissociated and N dative bonded structure". In the HRCLPES experiments, we found an N 1s peak (at 399.5 eV) and two 0 1s peaks (at 531.1 and 532.0 eV), which represent strong evidence that the adsorption configuration of glycine on Ge(100) is composed of both O-H dissociation and N dative bonding. All our STM, DFT, and HRCLPES results suggest that the adsorption structure of glycine molecules on Ge(100) is an "intrarow O-H dissociated and N dative bonded structure".
Publisher
AMER CHEMICAL SOC
Issue Date
2009-07
Language
ENG
Keywords

TEMPERATURE-PROGRAMMED DESORPTION; SCANNING-TUNNELING-MICROSCOPY; SEMICONDUCTOR SURFACES; ELECTRONIC-STRUCTURE; BINDING-SPECIFICITY; CHEMISTRY; ACID; SI(111)-7X7; INTERFACE; CU(110)

Citation

LANGMUIR, v.25, no.13, pp.7438 - 7442

ISSN
0743-7463
DOI
10.1021/la9003565
URI
http://hdl.handle.net/10203/11372
Appears in Collection
CH-Journal Papers(저널논문)
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