Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology

Abstract

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single-and dual-feedback configurations, have been designed, fabricated, and characterized, The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB Omega and 3.2 GHz, respectively, The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB Omega and 3.3 GHz, respectively, Their performance characteristics are excellent in terms of their application in communication systems.