Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single-and dual-feedback configurations, have been designed, fabricated, and characterized, The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dB Omega and 3.2 GHz, respectively, The dual-feedback version exhibits improved gain and bandwidth of 47.4 dB Omega and 3.3 GHz, respectively, Their performance characteristics are excellent in terms of their application in communication systems.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1998-02
Language
ENG
Keywords

FABRICATION

Citation

IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.2, pp.63 - 65

ISSN
1051-8207
DOI
10.1109/75.658642
URI
http://hdl.handle.net/10203/1136
Appears in Collection
EE-Journal Papers(저널논문)
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